? semiconductor components industries, llc, 2007 march, 2007 ? rev. 3 1 publication order number: bc556b/d bc556b, bc557a, b, c, bc558b amplifier transistors pnp silicon features ? pb?free packages are available* maximum ratings rating symbol value unit collector - emitter voltage bc556 bc557 bc558 v ceo ?65 ?45 ?30 vdc collector - base voltage bc556 bc557 bc558 v cbo ?80 ?50 ?30 vdc emitter - base voltage v ebo ?5.0 vdc collector current ? continuous collector current ? peak i c i cm ?100 ?200 madc base current ? peak i bm ?200 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com collector 1 2 base 3 emitter see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information 1 2 3 1 2 bent lead tape & reel ammo pack straight lead bulk pack 3 to?92 case 29 style 17 marking diagram bc 55xx ayww xx = 6b, 7a, 7b, 7c, or 8b a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location)
bc556b, bc557a, b, c, bc558b http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = ?2.0 madc, i b = 0) bc556 bc557 bc558 v (br)ceo ?65 ?45 ?30 ? ? ? ? ? ? v collector ?base breakdown voltage (i c = ?100 adc) bc556 bc557 bc558 v (br)cbo ?80 ?50 ?30 ? ? ? ? ? ? v emitter ?base breakdown voltage (i e = ?100 adc, i c = 0) bc556 bc557 bc558 v (br)ebo ?5.0 ?5.0 ?5.0 ? ? ? ? ? ? v collector?emitter leakage current (v ces = ?40 v) bc556 (v ces = ?20 v) bc557 bc558 (v ces = ?20 v, t a = 125 c) bc556 bc557 bc558 i ces ? ? ? ? ? ? ?2.0 ?2.0 ?2.0 ? ? ? ?100 ?100 ?100 ?4.0 ?4.0 ?4.0 na a on characteristics dc current gain (i c = ?10 adc, v ce = ?5.0 v) a series device b series devices c series devices (i c = ?2.0 madc, v ce = ?5.0 v) bc557 a series device b series devices c series devices (i c = ?100 madc, v ce = ?5.0 v) a series device b series devices c series devices h fe ? ? ? 120 120 180 420 ? ? ? 90 150 270 ? 170 290 500 120 180 300 ? ? ? 800 220 460 800 ? ? ? ? collector ?emitter saturation voltage (i c = ?10 madc, i b = ?0.5 madc) (i c = ?10 madc, i b = see note 1) (i c = ?100 madc, i b = ?5.0 madc) v ce(sat) ? ? ? ?0.075 ?0.3 ?0.25 ?0.3 ?0.6 ?0.65 v base ?emitter saturation voltage (i c = ?10 madc, i b = ?0.5 madc) (i c = ?100 madc, i b = ?5.0 madc) v be(sat) ? ? ?0.7 ?1.0 ? ? v base?emitter on voltage (i c = ?2.0 madc, v ce = ?5.0 vdc) (i c = ?10 madc, v ce = ?5.0 vdc) v be(on) ?0.55 ? ?0.62 ?0.7 ?0.7 ?0.82 v small?signal characteristics current ?gain ? bandwidth product (i c = ?10 ma, v ce = ?5.0 v, f = 100 mhz) bc556 bc557 bc558 f t ? ? ? 280 320 360 ? ? ? mhz output capacitance (v cb = ?10 v, i c = 0, f = 1.0 mhz) c ob ? 3.0 6.0 pf noise figure (i c = ?0.2 madc, v ce = ?5.0 v, bc556 r s = 2.0 k , f = 1.0 khz, f = 200 hz) bc557 bc558 nf ? ? ? 2.0 2.0 2.0 10 10 10 db small?signal current gain (i c = ?2.0 madc, v ce = 5.0 v, f = 1.0 khz) bc557 a series device b series devices c series devices h fe 125 125 240 450 ? ? ? ? 900 260 500 900 ? 1. i c = ?10 madc on the constant base current characteristics, which yields the point i c = ?11 madc, v ce = ?1.0 v.
bc556b, bc557a, b, c, bc558b http://onsemi.com 3 bc557/bc558 figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. ?saturation? and ?on? voltages i c , collector current (madc) ?0.2 0.2 figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) ?0.6 ?0.7 ?0.8 ?0.9 ?1.0 ?0.5 0 ?0.2 ?0.4 ?0.1 ?0.3 1.6 1.2 2.0 2.8 2.4 ?1.2 ?1.6 ?2.0 ?0.02 ?1.0 ?10 0 ?20 ?0.1 ?0.4 ?0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector?emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.7 0.5 0.3 ?0.2 ?10 ?100 ?1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = ?10 v v ce = ?10 v t a = 25 c ?55 c to +125 c i c = ?100 ma i c = ?20 ma ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 ?0.1 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 i c = ?200 ma i c = ?50 ma i c = ?10 ma figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. current?gain ? bandwidth product i c , collector current (madc) ?0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 ?0.5 c, capacitance (pf) f, current?gain ? bandwidth product (mhz) t t a = 25 c c ob c ib ?0.6 ?1.0 ?2.0 ?4.0 ?6.0 ?10 ?20 ?30 ?40 150 ?1.0 ?2.0 ?3.0 ?5.0 ?10 ?20 ?30 ?50 v ce = ?10 v t a = 25 c t a = 25 c 1.0
bc556b, bc557a, b, c, bc558b http://onsemi.com 4 bc556 figure 7. dc current gain i c , collector current (ma) figure 8. ?on? voltage i c , collector current (ma) ?0.8 ?1.0 ?0.6 ?0.2 ?0.4 1.0 2.0 ?0.1 ?1.0 ?10 ?200 ?0.2 0.2 0.5 ?0.2 ?1.0 ?10 ?200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = ?5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. base?emitter temperature coefficien t i c , collector current (ma) ?1.0 ?1.2 ?1.6 ?2.0 ?0.02 ?1.0 ?10 0 ?20 ?0.1 ?0.4 ?0.8 v ce , collector?emitter voltage (volts) vb , temperature coefficient (mv/ c) ?0.2 ?2.0 ?10 ?200 ?1.0 t j = 25 c i c = ?10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = ?5.0 v t a = 25 c 0 ?0.5 ?2.0 ?5.0 ?20 ?50 ?100 ?0.05 ?0.2 ?0.5 ?2.0 ?5.0 ?100 ma ?20 ma ?1.4 ?1.8 ?2.2 ?2.6 ?3.0 ?0.5 ?5.0 ?20 ?50 ?100 ?55 c to 125 c vb for v be ?2.0 ?5.0 ?20 ?50 ?100 figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. current?gain ? bandwidth product i c , collector current (ma) ?0.1 ?0.2 ?1.0 ?50 2.0 ?2.0 ?10 ?100 100 200 500 50 20 20 10 6.0 4.0 ?1.0 ?10 ?100 v ce = ?5.0 v c, capacitance (pf) f, current?gain ? bandwidth product t ?0.5 ?5.0 ?20 t j = 25 c c ob c ib 8.0 ?50 ma ?200 ma
bc556b, bc557a, b, c, bc558b http://onsemi.com 5 figure 13. thermal response t, time (ms) 1.0 r(t), transient thermal 2.0 5.0 1.0 0.5 0.2 0.1 resistance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10 figure 14. active region ? safe operating area v ce , collector?emitter voltage (v) ?200 ?1.0 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse single pulse bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c z jc (t) = (t) r jc r jc = 83.3 c/w max z ja (t) = r(t) r ja r ja = 200 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 ?100 ?50 ?10 ?5.0 ?2.0 ?5.0 ?10 ?30 ?45 ?65 ?100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c ?v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 14 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 13. at high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
bc556b, bc557a, b, c, bc558b http://onsemi.com 6 ordering information device package shipping ? bc556bg to?92 (pb?free) 5000 units / bulk bc556bzl1g to?92 (pb?free) 2000 / ammo box bc557azl1g to?92 (pb?free) 2000 / ammo box bc557bg to?92 (pb?free) 5000 units / bulk bc557brl1 to?92 2000 / tape & reel bc557brl1g to?92 (pb?free) 2000 / tape & reel bc557bzl1g to?92 (pb?free) 2000 / ammo box BC557CG to?92 (pb?free) 5000 units / bulk bc557czl1g to?92 (pb?free) 2000 / ammo box bc558brlg to?92 (pb?free) 2000 / tape & reel bc558brl1g to?92 (pb?free) 2000 / tape & reel bc558bzl1g to?92 (pb?free) 2000 / ammo box ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
bc556b, bc557a, b, c, bc558b http://onsemi.com 7 package dimensions to?92 (to?226) case 29?11 issue am notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 ??? 12.70 ??? l 0.250 ??? 6.35 ??? n 0.080 0.105 2.04 2.66 p ??? 0.100 ??? 2.54 r 0.115 ??? 2.93 ??? v 0.135 ??? 3.43 ??? 1 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j b k g section x?x c v d n xx seating plane dim min max millimeters a 4.45 5.20 b 4.32 5.33 c 3.18 4.19 d 0.40 0.54 g 2.40 2.80 j 0.39 0.50 k 12.70 ??? n 2.04 2.66 p 1.50 4.00 r 2.93 ??? v 3.43 ??? 1 t straight lead bulk pack bent lead tape & reel ammo pack style 17: pin 1. collector 2. base 3. emitter on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 bc556b/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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